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| IXFC 15N80Q HiPerFETTM ISOPLUS 220TM MOSFET Q-Class Electrically Isolated Back Surface N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg VDSS ID25 RDS(on) = 800 V = 13 A = 0.65 trr 250 ns ISOPLUS220TM Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL FC Weight 1.6 mm (0.062 in.) from case for 10 s 50/60 Hz, RMS t = 1 min leads to tab mounting force with clip Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 2 TC = 25C 230 -40 ... +150 150 -40 ... +150 300 2500 11...65 / 2.5...15 2 W C C C C V N/lb g Maximum Ratings 800 800 20 30 13 60 15 30 1.0 10 V V V V A A A mJ J V/ns G = Gate S = Source Features Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain to tab capacitance(<35pF) Low RDS (on) Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Fast intrinsic Rectifier Applications DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Advantages Easy assembly: no screws or isolation foils required Space savings High power density G D S Isolated back surface* D = Drain Symbol Test Conditions (TJ = 25C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3 mA VDS = VGS, ID = 4 mA VGS = 20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 25C TJ = 125C Characteristic Values Min. Typ. Max. 800 2.0 4.5 100 25 1 0.65 V V nA A mA V GS = 10 V, ID = 0.5 ID25 Pulse test, t 300 s, duty cycle d 2 % See IXFH15N80Q data sheet for characteristic curves (c) 2003 IXYS All rights reserved DS98946B(07/03) IXFC 15N80Q Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 8 16 4300 VGS = 0 V, VDS = 25 V, f = 1 MHz 360 60 18 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 RG = 1.5 (External) 27 53 16 90 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 20 30 0.54 (TO-247) 0.25 S pF pF pF ns ns ns ns nC nC nC K/W K/W ISOPLUS220 Outline gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS = 10 V; ID = 0.5 ID25, pulse test Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS = 0 V Repetitive; Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 15 60 1.5 250 A A V ns C A IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = IS-di/dt = 100 A/s, VR = 100 V 0.85 8 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 |
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